| PART |
Description |
Maker |
| IRFN140SMD |
ER CET 0 22 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Power MOSFET(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)) N沟道功率MOSFET（减振钢板基本：100V的，身份证（续）3.9A，的Rds（on）：0.077Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本100V的，身份证（续）3.9A时，RDS（对）：0.077Ω））
|
TT electronics Semelab, Ltd.
International Rectifier, Corp.
Seme LAB
|
| MRA0412 MRA0104 MRA0309 |
Power dissipation up to 2W
RoHS Compliant
Power dissipation up to 2W
|
Ohmite Mfg. Co.
|
| IRF9530S IRF9530SMD |
P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω))
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| IRF9130SMD |
P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω))
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| 1N2169 1N2164A 1N2171 1N2167 1N2165A 1N2170A 1N216 |
Power Dissipation
|
New Jersey Semi-Conductor P...
|
| 1N5943A 1N5929A 1N5937A 1N5949A 1N5950A 1N5930A 1N |
POWER DISSIPATION: 1.5W
|
Shenzhen Luguang Electronic Technology Co., Ltd
|
| AN303 |
HC-MOS Power Dissipation
|
Fairchild Semiconductor
|
| VSC8171 VSC8172 |
SONET/SDH 16:1 Mux with CMU. 5.2V power supply, 2.6W power dissipation
|
Vitesse Semiconductor Corporation
Vitesse Semiconductor C...
|
| SML9030-T254 SML9030T254 |
P-Channel MOS Transistor(Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω)(P沟道MOS晶体Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω))
|
Semelab(Magnatec)
TT electronics Semelab Limited
Seme LAB
|
| KTA1273 |
Collector Power Dissipation: PC=500mW
|
TY Semiconductor Co., Ltd
|
| BUZ83A |
SOA is Power Dissipation Limited
|
Inchange Semiconductor ...
|
| BUX21A |
HIGH POWER DISSIPATION TRANSISTOR
|
Comset Semiconductors
|
